Comparative Study of Ballistic Transport in Si and GaAs using Non Equilibrium Green's Function Formalism

被引:0
作者
Shaukat, Ayesha [1 ]
Islam, Naz E. [1 ,2 ]
机构
[1] Univ Missouri, Elect & Comp Engn Dept, Columbia, MO 65211 USA
[2] Univ Missouri, Nucl Engn Program, Columbia, MO 65211 USA
来源
PROCEEDINGS OF 2014 12TH INTERNATIONAL CONFERENCE ON FRONTIERS OF INFORMATION TECHNOLOGY | 2014年
关键词
NEGF; Ballistic Transport; Density of States; Nanowire MOSFETs; DIBL; DGSOI MOSFETs;
D O I
10.1109/FIT.2014.76
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
This paper demonstrates a comparative study of Silicon (Si) and Gallium Arsenide (GaAs) in Double Gate Silicon on-Insulator (DGSOI) MOSFET, where electrons, when held in a quantum well, are ballistically transported from source to drain. Different parameters like Density of States(DOS),current voltage (IV) characteristics and exchange correlation effects are compared and discussed using Non Equilibrium Green s' Function (NEGF) formulation.
引用
收藏
页码:372 / 375
页数:4
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