Opportunities in vanadium-based strongly correlated electron systems

被引:88
作者
Brahlek, Matthew [1 ]
Zhang, Lei [1 ]
Lapano, Jason [1 ]
Zhang, Hai-Tian [1 ]
Engel-Herbert, Roman [1 ]
Shukla, Nikhil [2 ]
Datta, Suman [2 ]
Paik, Hanjong [3 ]
Schlom, Darrell G. [3 ]
机构
[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16801 USA
[2] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
[3] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
METAL-INSULATOR-TRANSITION; MOTT-HUBBARD SYSTEMS; DIOXIDE THIN-FILMS; FIELD-EFFECT TRANSISTORS; MOS I-MOS; NEGATIVE CAPACITANCE; SEMICONDUCTOR TRANSITION; TRANSPORT-PROPERTIES; SPECTRAL-FUNCTION; CONDUCTIVE SRVO3;
D O I
10.1557/mrc.2017.2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The diverse and fascinating properties of transition metal oxides stem from the strongly correlated electronic degrees of freedom; the scientific challenge and range of possible applications of these materials have caused fascination among physicists and materials scientists, thus capturing research efforts for nearly a century. Here, we focus on the binary VxOy and the ternary perovskite AVO(3) and review the key aspects from the underlying physical framework and their basic properties, recent strides made in thin-film synthesis, to recent efforts to implement vanadium-based oxides for practical applications that augment existing technologies, which surpass limitations of conventional materials.
引用
收藏
页码:27 / 52
页数:26
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