Room-temperature multiferroicity in GaFeO3 thin film grown on (100)Si substrate

被引：3

作者：

Goswami, Sudipta ^{[1
]}

Mishra, Shubhankar ^{[1
]}

Dana, Kausik ^{[2
]}

Mandal, Ashok Kumar ^{[3
]}

Dey, Nitai ^{[3
]}

Pal, Prabir ^{[3
]}

Satpati, Biswarup ^{[4
]}

Mukhopadhyay, Mrinmay ^{[4
]}

Ghosh, Chandan Kumar ^{[1
]}

Bhattacharya, Dipten ^{[5
]}

机构：

[1] Jadavpur Univ, Sch Mat Sci & Nanotechnol, Kolkata 700032, India

[2] CSIR Cent Glass & Ceram Res Inst, Refractories & Tradit Ceram Div, Kolkata 700032, India

[3] CSIR Cent Glass & Ceram Res Inst, Mat Characterizat & Instrumentat Div, Kolkata 700032, India

[4] Saha Inst Nucl Phys, A CI Homi Bhabha Natl Inst, Surface Phys & Mat Sci Div, 1 AF Bidhannagar, Kolkata 700032, India

[5] CSIR Cent Glass & Ceram Res Inst, Adv Mat & Chem Characterizat Div, Kolkata 700032, India

来源：

JOURNAL OF APPLIED PHYSICS | 2022年 / 132卷 / 21期

关键词：

D O I：

10.1063/5.0123397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature magnetoelectric multiferroicity has been observed in c-axis oriented GaFeO3 thin films (space group Pna2(1)), grown on economic and technologically important (100)Si substrates by a pulsed laser deposition technique. Structural analysis and comprehensive mapping of the Ga:Fe ratio across a length scale range of 10(4) reveals coexistence of epitaxial and chemical strain. It induces formation of finer magnetic domains and large magnetoelectric coupling-a decrease in remanent polarization by similar to 21% under similar to 50 kOe. Magnetic force microscopy reveals the presence of both finer (<100 nm) and coarser (similar to 2 mu m) magnetic domains. Strong multiferroicity in epitaxial GaFeO3 thin films, grown on a (100)Si substrate, brighten the prospect of their integration with Si-based electronics and could pave the way for development of economic and more efficient electromechanical, electrooptic, or magnetoelectric sensor devices. Published under an exclusive license by AIP Publishing.

引用

页数：9

共 30 条

[11] Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon [J].