Vertical Strain Engineering of Epitaxial La2/3Sr1/3MnO3 Thin Films by Spontaneously Embedding ZrO2 Nanopillar Arrays

被引:1
作者
Cao, Guixin [1 ,2 ,3 ]
Song, Kepeng [4 ]
Qiao, Liang [5 ]
Guo, Junjie [6 ]
Han, Weihua [7 ]
Shen, Xuechu [8 ]
Du, Kui [4 ]
Zhang, Jincang [1 ,2 ]
Singh, David J. [9 ]
Gao, Yuze [1 ,2 ]
机构
[1] Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China
[2] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China
[3] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA
[4] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
[5] Univ Elect Sci & Technol China, Sch Phys, Chengdu 610054, Peoples R China
[6] Taiyuan Univ Technol, Minist Educ, Key Lab Interface Sci & Engn Adv Mat, Taiyuan 030024, Peoples R China
[7] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
[8] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[9] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
基金
中国国家自然科学基金;
关键词
epitaxial thin films; magnetoresistance; nanopillar arrays; spontaneous ordering; ELECTRONIC-STRUCTURE; NANOCOMPOSITE;
D O I
10.1002/admi.202001355
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Rational control of local strain distributions and thus the functional properties of epitaxial thin films has been a long-standing goal in the development of new physics and novel devices based on strain-sensitive materials. Here, the fabrication of La2/3Sr1/3MnO3 (LSMO) films with strain fields arising from vertical epitaxial embedding of ultra-small ZrO2 nanopillars, diameter 4.0 +/- 0.6 nm, is reported. High quality films are obtained with average distance between adjacent nanopillars of 9.0 +/- 0.3 nm for x = 0.2 in (LSMO)(1-)(x):(ZrO2)(x). The strain distribution of the vertical interface is analyzed in detail and the dominant state of the interfacial strain is verified. Remarkably, with increasing x, the Curie temperature T-C and metal-insulator (MI) transition temperature T-MI show a surprisingly large depression, revealing the significant tuning capability of the vertical tensile stress originating from the small-size ZrO2 pillars. A systematic tunability of the low field magnetoresistance is also found. The field dependence of the magnetization exhibits both horizontal and vertical shifts. The exchange bias field H-E increases with increasing x, while magnetization shift M-shift is unchanged. The results suggest the possibility of strain tuning through epitaxial nanostructures for multifunctional applications across many fields with appropriate selection of matrix and nanopillar materials.
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页数:11
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