The Application of Carbon Nanotubes in CMOS Integrated Circuits

被引：0

作者：

Chan, Philip C. H. ^{[1
]}

Yang, Chai ^{[1
]}

Zhang, Min ^{[1
]}

Fu, Yunyi ^{[2
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China

[2] Peking Univ, Beijing, Peoples R China

来源：

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and a critical material for the integrated circuit interconnection. In this talk, we shall present some of the works we have done on applying carbon nanotubes to the CMOS Integrated Circuits in our research group at the Hong Kong University of Science and Technology.

引用

页码：534 / 536

页数：3