Size-dependent resistivity of nanometric copper wires

被引:37
作者
Marom, H. [1 ]
Mullin, J.
Eizenberg, M.
机构
[1] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel
[2] Tower Semicond Ltd, IL-23105 Migdal Haemeq, Israel
关键词
D O I
10.1103/PhysRevB.74.045411
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Higher electrical resistivity is observed in metals when dimensions approach the mean free path of the electrons. The effects of electron scattering at surfaces and at grain boundaries are then becoming substantial. This issue has been extensively studied on thin films but rarely on wires, where both small dimensions (width and height) influence the resistivity increase. In this study, copper wires having variable width and height down to 100 nm are investigated. An alternative approach is suggested in which the resistivity of such wires at different temperatures is compared to that of films having thickness that is equal to the height of the wires. The main outcome is a reliable model that overcomes the well-known difficulty of separating the contribution of surfaces to the resistivity from that of grain boundaries. It is shown that when both width and height of the wire are larger than one third of the mean free path, its resistivity exhibits a filmlike behavior with a separate contribution to the resistivity of each small dimension. The scattering of electrons at the surfaces of the investigated wires was best described by a zero specularity parameter, indicating the importance of this effect for the resistivity increase in small wires.
引用
收藏
页数:9
相关论文
共 14 条
  • [1] CAMBERS R, 1950, P ROY SOC A, V202, P378
  • [2] THE ELECTRICAL CONDUCTIVITY OF THIN WIRES
    DINGLE, RB
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 201 (1067): : 545 - 560
  • [3] Size effects in the electrical resistivity of polycrystalline nanowires
    Durkan, C
    Welland, ME
    [J]. PHYSICAL REVIEW B, 2000, 61 (20) : 14215 - 14218
  • [4] FUCHS K, 1938, P CAMBRIDGE PHILOS S, V34, P110
  • [5] Thickness dependence of resistivity for Cu films deposited by ion beam deposition
    Lim, JW
    Mimura, K
    Isshiki, M
    [J]. APPLIED SURFACE SCIENCE, 2003, 217 (1-4) : 95 - 99
  • [6] Thickness dependent electrical resistivity of ultrathin (<40 nm) Cu films
    Liu, HD
    Zhao, YP
    Ramanath, G
    Murarka, SP
    Wang, GC
    [J]. THIN SOLID FILMS, 2001, 384 (01) : 151 - 156
  • [7] SIZE EFFECT VARIATION OF THE ELECTRICAL CONDUCTIVITY OF METALS
    MACDONALD, DKC
    SARGINSON, K
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 203 (1073): : 223 - 240
  • [8] The contribution of grain boundary scattering versus surface scattering to the resistivity of thin polycrystalline films
    Marom, H.
    Ritterband, M.
    Eizenberg, M.
    [J]. THIN SOLID FILMS, 2006, 510 (1-2) : 62 - 67
  • [9] The temperature dependence of resistivity in thin metal films
    Marom, H
    Eizenberg, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (06) : 3319 - 3323
  • [10] ELECTRICAL-RESISTIVITY MODEL FOR POLYCRYSTALLINE FILMS - CASE OF ARBITRARY REFLECTION AT EXTERNAL SURFACES
    MAYADAS, AF
    SHATZKES, M
    [J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1382 - &