Atomic configuration of irradiation-induced planar defects in 3C-SiC

被引：18

作者：

Lin, Y. R. ^{[1
,2
]}

Ho, C. Y. ^{[3
]}

Hsieh, C. Y. ^{[4
]}

Chang, M. T. ^{[4
]}

Lo, S. C. ^{[4
]}

Chen, F. R. ^{[1
]}

Kai, J. J. ^{[1
,3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

[2] Natl Synchrotron Radiat Ctr, Hsinchu 30076, Taiwan

[3] Natl Tsing Hua Univ, Inst Nucl Engn & Sci, Hsinchu 30013, Taiwan

[4] Ind Technol Res Inst, Mat & Chem Res Labs, Hsinchu 31040, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 12期

关键词：

TRANSMISSION ELECTRON-MICROSCOPY; HIGH-TEMPERATURES; SILICON-CARBIDE;

D O I：

10.1063/1.4869829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions. (C) 2014 AIP Publishing LLC.

引用

页数：3

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