Atomic configuration of irradiation-induced planar defects in 3C-SiC

被引：18
|
作者：
Lin, Y. R. [1 ,2 ]
Ho, C. Y. [3 ]
Hsieh, C. Y. [4 ]
Chang, M. T. [4 ]
Lo, S. C. [4 ]
Chen, F. R. [1 ]
Kai, J. J. [1 ,3 ]
机构：
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan
[2] Natl Synchrotron Radiat Ctr, Hsinchu 30076, Taiwan
[3] Natl Tsing Hua Univ, Inst Nucl Engn & Sci, Hsinchu 30013, Taiwan
[4] Ind Technol Res Inst, Mat & Chem Res Labs, Hsinchu 31040, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 12期
关键词：
TRANSMISSION ELECTRON-MICROSCOPY; HIGH-TEMPERATURES; SILICON-CARBIDE;
D O I：
10.1063/1.4869829
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions. (C) 2014 AIP Publishing LLC.
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页数：3
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