TEM studies of dislocation-based silicon light emitting devices

被引：0

作者：

Milosavljevic, M ^{[1
]}

Lourenco, MA

Siddiqui, MSA

Shao, G

Gwilliam, RM

Homewood, KP

机构：

[1] Univ Surrey, Sch Elect & Phys Sci, Guildford GU2 7XH, Surrey, England

[2] Univ Surrey, Sch Engn, Guildford GU2 7XH, Surrey, England

来源：

ELECTRON MICROSCOPY AND ANALYSIS 2003 | 2004年 / 179期

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Results of TEM studies of dislocation-based silicon light emitting devices are presented. The basics of these devices are dislocation loops, which were formed by implantation of boron ions in n-type Si (100) wafers, and by subsequent rapid thermal annealing. Dislocation loops were found to be of the interstitial type, with Burgers vectors of a/3 <111>, sitting in the four non-parallel {111} lattice planes. Their appearance, distribution and density were correlated to ion implantation parameters.

引用

页码：99 / 102

页数：4

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