All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)

被引：120

作者：

Kwoen, Jinkwan ^{[1
]}

Jang, Bongyong ^{[1
]}

Lee, Joohang ^{[2
]}

Kageyama, Takeo ^{[1
]}

Watanabe, Katsuyuki ^{[2
]}

Arakawa, Yasuhiko ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Komaba 4-6-1, Tokyo, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Komaba 4-6-1, Tokyo, Japan

来源：

OPTICS EXPRESS | 2018年 / 26卷 / 09期

关键词：

GAAS; INJECTION;

D O I：

10.1364/OE.26.011568

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source. Nowadays, laser structures containing high quality InAs / GaAs QD are generally grown by molecular beam epitaxy (MBE). However, the buffer layer between the on-axis Si (001) substrate and the laser structure are usually grown by metal-organic chemical vapor deposition (MOCVD). In this paper, we demonstrate all MBE grown high-quality InAs/GaAs QD lasers on on-axis Si (001) substrates without using patterning and intermediate layers of foreign material. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

引用

页码：11568 / 11576

页数：9

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