ELECTROPLASTIC EFFECT ASSOCIATED WITH THE DISLOCATION GENERATION IN THE INITIALLY DISLOCATION-FREE SILICON WHISKERS

被引：0
|
作者：
Ermakov, A. P. [1 ]
Proskurin, D. K. [1 ]
Ermakov, S. A. [2 ]
Chernoyarov, O. V. [3 ]
机构：
[1] Voronezh State Univ Architecture & Civil Engn, 84,20 Letiya Oktyabrya Str, Voronezh 394006, Russia
[2] Voronezh State Tech Univ, Voronezh, Voronezhskaya O, Russia
[3] Moscow Power Engn Inst, Natl Res Inst, Moscow, Russia
来源：
2014 24TH INTERNATIONAL CRIMEAN CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY (CRIMICO) | 2014年
基金：
俄罗斯科学基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experiments on local high-intensity electric current pulse effect on mechanical properties of silicon whiskers made it possible to reveal a novel type of electroplastic effect associated with the generation of dislocations. The procedure of electric current effect by single impulses on the silicon whiskers of the having the highest specific strength from all investigated versions of shapes of a solid body is offered. The structure of crystals in an initial state and aflerthe effect by single impulses of current of various density is investigated.
引用
收藏
页码：692 / 693
页数：2
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