Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks

被引：5

作者：

Fet, A. ^{[1
]}

Haeublein, V. ^{[1
]}

Bauer, A. J. ^{[1
]}

Ryssel, H. ^{[1
,2
]}

机构：

[1] Fraunhofer IISB, D-91058 Erlangen, Germany

[2] Lehrstuhl Elect Bauelemente, D-91058 Erlangen, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 01期

关键词：

INTERFACE;

D O I：

10.1116/1.3021043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

While the debate about the exact cause of Fermi level pinning in metal-high-k dielectric gate stacks is ongoing, several solutions for engineering the threshold voltage V-t of the gate stacks have been proposed. Engineering the flat-band. voltage V-fb, translates into an effective control of the threshold voltage. This study uses ion implantation as a tool to adjust V-fb by doping the gate stack. It is shown that lanthanide implantation can modulate the effective work function for n-type gate electrodes. Ion implantation of dysprosium (Dy) and lanthanum (La) into the gate stack achieves significant flat-band voltage. shifts of about -1 and -3 V, respectively, for a dose of 1 X 10(14) cm(-1). By increasing the implantation dose and energy, larger shifts in the flat-band voltage are obtainable. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3021043]

引用

页码：290 / 293

页数：4

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