Terbium oxide films grown by chemical vapor deposition from terbium(III) dipivaloylmethanate

被引：26

作者：

Belaya, S. V. ^{[1
]}

Bakovets, V. V. ^{[1
]}

Boronin, A. I. ^{[2
]}

Koshcheev, S. V. ^{[2
]}

Lobzareva, M. N. ^{[1
]}

Korolkov, I. V. ^{[1
]}

Stabnikov, P. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Nikolaev Inst Inorgan Chem, Novosibirsk 630090, Russia

[2] Russian Acad Sci, Siberian Branch, Boreskov Inst Catalysis, Novosibirsk 630090, Russia

来源：

INORGANIC MATERIALS | 2014年 / 50卷 / 04期

关键词：

OXIDATION;

D O I：

10.1134/S0020168514040037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Terbium oxide films have been grown on Si(111) substrates by decomposition of Tb(dpm)(3) vapor in argon flow at Tb(dpm)(3) source temperatures of 170 and 190A degrees C and substrate temperatures from 470 to 550A degrees C. The films have been annealed in air at temperatures of 400, 650, and 800A degrees C. X-ray diffraction characterization results show that the films grown by chemical vapor deposition consist of cubic Tb2O3. The films annealed in air at 650 and 800A degrees C are isostructural with Tb4O7, and those annealed at 400A degrees C are isostructural with Tb11O20. According to X-ray photoelectron spectroscopy data, the 9-nm-thick surface layer of the Tb2O3 film has the correct stoichiometry O: Tb = 1.48, whereas the film annealed at 800A degrees C has O: Tb = 1.85. Raman spectroscopy data demonstrate that the concentration of carbon-containing species on the surface of the films decreases with decreasing substrate temperature and can be brought to zero by air annealing at 800A degrees C.

引用

页码：379 / 386

页数：8

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