Terbium oxide films grown by chemical vapor deposition from terbium(III) dipivaloylmethanate

被引：23

作者：

Belaya, S. V. ^{[1
]}

Bakovets, V. V. ^{[1
]}

Boronin, A. I. ^{[2
]}

Koshcheev, S. V. ^{[2
]}

Lobzareva, M. N. ^{[1
]}

Korolkov, I. V. ^{[1
]}

Stabnikov, P. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Nikolaev Inst Inorgan Chem, Novosibirsk 630090, Russia

[2] Russian Acad Sci, Siberian Branch, Boreskov Inst Catalysis, Novosibirsk 630090, Russia

来源：

INORGANIC MATERIALS | 2014年 / 50卷 / 04期

关键词：

OXIDATION;

D O I：

10.1134/S0020168514040037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Terbium oxide films have been grown on Si(111) substrates by decomposition of Tb(dpm)(3) vapor in argon flow at Tb(dpm)(3) source temperatures of 170 and 190A degrees C and substrate temperatures from 470 to 550A degrees C. The films have been annealed in air at temperatures of 400, 650, and 800A degrees C. X-ray diffraction characterization results show that the films grown by chemical vapor deposition consist of cubic Tb2O3. The films annealed in air at 650 and 800A degrees C are isostructural with Tb4O7, and those annealed at 400A degrees C are isostructural with Tb11O20. According to X-ray photoelectron spectroscopy data, the 9-nm-thick surface layer of the Tb2O3 film has the correct stoichiometry O: Tb = 1.48, whereas the film annealed at 800A degrees C has O: Tb = 1.85. Raman spectroscopy data demonstrate that the concentration of carbon-containing species on the surface of the films decreases with decreasing substrate temperature and can be brought to zero by air annealing at 800A degrees C.

引用

页码：379 / 386

页数：8

共 24 条

[1] Andreeva A.F., 1997, POLUCHENIE SVOISTVA, P107
[2] [Anonymous], 2010, POWD DIFFR FIL IN PH
[3] [Anonymous], 1983, PRACTICAL SURFACE AN
[4] [Anonymous], 1995, Handbook of X-ray Photoelectron Spectroscopy. A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data
[5] TERBIUM OXIDES .3. X-RAY DIFFRACTION STUDIES OF SEVERAL STABLE PHASES
BAENZIGER, N
SCHULDT, HS
EYRING, L
EICK, HA
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1961, 83 (10) : 2219 - &
[6] Chemical vapor deposition of Y2O3 films using Y(dpm)3
Bakovets, VV
Levashova, TM
Ratushnyak, VT
Bakhturova, LF
[J]. INORGANIC MATERIALS, 2002, 38 (04) : 371 - 373
[7] CHARACTERIZATION OF THIN SOLID FILMS OF RARE-EARTH-OXIDES FORMED BY THE METALLOORGANIC CHEMICAL-VAPOR-DEPOSITION TECHNIQUE, FOR HIGH-TEMPERATURE CORROSION APPLICATIONS
BONNET, G
LACHKAR, M
COLSON, JC
LARPIN, JP
[J]. THIN SOLID FILMS, 1995, 261 (1-2) : 31 - 36
[8] SrCl2-Promoted REOx (RE = Ce, Pr, Tb) catalysts for the selective oxidation of ethane:: A study on performance and defect structures for ethene formation
Dai, HX
Ng, CF
Au, CT
[J]. JOURNAL OF CATALYSIS, 2001, 199 (02) : 177 - 192
[9] SELECTIVE SITE EXCITATION OF EUROPIUM-DOPED MONOCLINIC GD2O3
DALY, JG
SCHMIDT, JA
GRUBER, JB
[J]. PHYSICAL REVIEW B, 1983, 27 (09): : 5250 - 5256
[10] Eyring L., 1966, PROGR SCI TECHNOLOGY, P180

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