High energy-storage density of lead-free BiFeO3 doped Na0.5Bi0.5TiO3-BaTiO3 thin film capacitor with good temperature stability

被引：80

作者：

Tang, Zhenhua ^{[1
,2
,4
]}

Ge, Jing ^{[3
]}

Ni, Hao ^{[4
,6
]}

Lu, Biao ^{[2
]}

Tang, Xin-Gui ^{[1
]}

Lu, Sheng-Guo ^{[2
]}

Tang, Minghua ^{[5
]}

Gao, Ju ^{[4
]}

机构：

[1] Guangdong Univ Technol, Guangzhou Higher Educ Mega Ctr, Sch Phys & Optoelect Engn, Guangzhou 510006, Guangdong, Peoples R China

[2] Guangdong Univ Technol, Sch Mat & Energy, Guangdong Prov Key Lab Funct Soft Condensed Matte, Guangzhou 510006, Guangdong, Peoples R China

[3] Hunan Prov Maternal & Child Hlth Care Hosp, Changsha 410008, Hunan, Peoples R China

[4] Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China

[5] Xiangtan Univ, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Hunan, Peoples R China

[6] China Univ Petr, Coll Sci, Qingdao 266580, Shandong, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 757卷

基金：

中国国家自然科学基金;

关键词：

NBT-BT-BFO thin films; Sol-gel; Ferroelectric properties; Energy storage; Temperature stability; ELECTRICAL-PROPERTIES; DIELECTRIC-PROPERTIES; CERAMICS; POLYMER; MICROSTRUCTURE; PERFORMANCE;

D O I：

10.1016/j.jallcom.2018.05.072

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, the lead-free and BiFeO3 doping Na0.5Bi0.5TiO3-BaTiO3 thin films [(0.94-x)Na0.5Bi0.5TiO3-0.06BaTiO(3)-xBiFeO(3) (NBT-6BT-xBFO), x = 0.00, 0.01, 0.03, 0.05 and 0.07] were deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method. The enhanced ferroelectric properties and high energy-storage density have been achieved at 5% BiFeO3 substitution. Moreover, the 5% BiFeO3 doping Na0.5Bi0.5TiO3-BaTiO3 (0.89NBT-0.066T-0.056FO) thin-films exhibited a high dischargeable energy density (W-recovered) of 42.9 J/cm(3) with a corresponding energy-storage efficiency CO of 65.7% under an electric field of 1720 kV/cm, and the high temperature stabilities with regard to their energy-storage properties over temperatures ranging from room temperature to 260 degrees C were demonstrated, and the charging and discharging characteristics demonstrate the faster microsecond discharge and large dielectric strength of the thin film capacitor. The results indicated that the 0.89NBT-0.066T-0.056FO thin-films might be promising environmentally friendly lead-free materials for energy-storage capacitor application. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：169 / 176

页数：8

共 48 条

[1] Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times [J].