Promoting SnTe as an Eco-Friendly Solution for p-PbTe Thermoelectric via Band Convergence and Interstitial Defects

被引:379
|
作者
Li, Wen [1 ]
Zheng, Linglang [1 ]
Ge, Binghui [2 ]
Lin, Siqi [1 ]
Zhang, Xinyue [1 ]
Chen, Zhiwei [1 ]
Chang, Yunjie [2 ]
Pei, Yanzhong [1 ]
机构
[1] Tongji Univ, Sch Mat Sci & Engn, Key Lab Adv Civil Engn Mat, Minist Educ, 4800 Caoan Rd, Shanghai 201804, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
VALENCE-BAND; THERMAL-CONDUCTIVITY; HIGH FIGURE; PERFORMANCE; ENHANCEMENT; EFFICIENCY; MERIT; OPTIMIZATION; SCATTERING; ALLOYS;
D O I
10.1002/adma.201605887
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Compared to commercially available p-type PbTe thermoelectrics, SnTe has a much bigger band offset between its two valence bands and a much higher lattice thermal conductivity, both of which limit its peak thermoelectric figure of merit, zT of only 0.4. Converging its valence bands or introducing resonant states is found to enhance the electronic properties, while nanostructuring or more recently introducing interstitial defects is found to reduce the lattice thermal conductivity. Even with an integration of some of the strategies above, existing efforts do not enable a peak zT exceeding 1.4 and usually involve Cd or Hg. In this work, a combination of band convergence and interstitial defects, each of which enables a approximate to 150% increase in the peak zT, successfully accumulates the zT enhancements to be approximate to 300% (zT up to 1.6) without involving any toxic elements. This opens new possibilities for further improvements and promotes SnTe as an environment-friendly solution for conventional p-PbTe thermoelectrics.
引用
收藏
页数:8
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