Highly porous silicon membrane fabrication using polymer self-assembly

被引：41

作者：

Black, C. T. ^{[1
]}

Guarini, K. W. ^{[1
]}

Breyta, G. ^{[1
]}

Colburn, M. C. ^{[1
]}

Ruiz, R. ^{[1
]}

Sandstrom, R. L. ^{[1
]}

Sikorski, E. M. ^{[1
]}

Zhang, Y. ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 06期

关键词：

D O I：

10.1116/1.2366700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A combination of diblock copolymer self-assembly and state-of-the-art semiconductor device fabrication methods is used to create highly uniform suspended porous silicon membranes. Integration of these two processing techniques is key to realizing manufacturable high quality devices. Three different methods are shown for adjusting membrane pore dimensions between 10 and 35 nm, allowing device optimization for specific applications. (c) 2006 American Vacuum Society.

引用

页码：3188 / 3191

页数：4

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