Optical modulation by carrier depletion in a silicon PIN diode

被引：67
作者：
Marris-Morini, Delphine
Le Roux, Xavier
Vivien, Laurent
Cassan, Eric
Pascal, Daniel
Halbwax, Mathieu
Maine, Sylvain
Laval, Suzanne
Fedeli, Jean Marc
Damlencourt, Jean Francois
机构：
[1] Univ Paris 11, UMR CNRS 8622, Inst Elect Fondamentale, F-91405 Orsay, France
[2] CEA, DRT, LETI, F-38054 Grenoble 9, France
来源：
OPTICS EXPRESS | 2006年 / 14卷 / 22期
关键词：
D O I：
10.1364/OE.14.010838
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Experimental results for refractive index variation induced by depletion in a silicon structure integrated in a PIN diode are reported. Thermal effect has been dissociated from the electrical contribution due to carrier density variation induced by a reverse bias voltage. A figure of merit V pi L pi of 3.1 V. cm has been obtained at 1.55 mu m. Numerical simulations show a good agreement between experimental and theoretical index variations. (c) 2006 Optical Society of America.
引用
收藏
页码：10838 / 10843
页数：6
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