On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

被引：18

作者：

Efthymiou, Loizos ^{[1
]}

Camuso, Gianluca ^{[1
]}

Longobardi, Giorgia ^{[1
]}

Chien, Terry ^{[2
]}

Chen, Max ^{[2
]}

Udrea, Florin ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

[2] Vishay Gen Semicond, Taipei 23145, Taiwan

来源：

ENERGIES | 2017年 / 10卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

wide band gap semiconductors; III-V semiconductors; gallium compounds; enhancement; GaN; HEMT; switching; parasitics; inductance; SPICE; clamped; Miller capacitance;

D O I：

10.3390/en10030407

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode GaN high electron mobility transistor (HEMT) is switched in a clamped inductive switching configuration with the aim of investigating the source of oscillatory effects observed. These arise as a result of the increased switching speed capability of GaN devices compared to their silicon counterparts. The study identifies the two major mechanisms (Miller capacitance charge and parasitic common source inductance) that can lead to ringing behaviour during turn-off and considers the effect of temperature on the latter. Furthermore, the experimental results are backed by SPICE modelling to evaluate the contribution of different circuit components to oscillations. The study concludes with good design techniques that can suppress the effects discussed.

引用

页数：11

共 15 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[2]

Donkers J., 2013, CS MANTECH Conference, P259

[3]

Eco J., AN1368

[4]

Efthymiou L, 2016, INT SYM POW SEMICOND, P71, DOI 10.1109/ISPSD.2016.7520780

[5]

Hwang I, 2012, PROC INT SYMP POWER, P41, DOI 10.1109/ISPSD.2012.6229018

[6]

Jones EA, 2016, APPL POWER ELECT CO, P1010, DOI 10.1109/APEC.2016.7467994

[7]

Jones EA, 2015, IEEE ENER CONV, P400, DOI 10.1109/ECCE.2015.7309716

[8]

Kwan M. H., 2014, P INT S POW SEM DEV, P17

[9] Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors [J].

Lee, Finella ;

Su, Liang-Yu ;

Wang, Chih-Hao ;

Wu, Yuh-Renn ;

Huang, Jianjang .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (03) :232-234

[10]

Lidow A., 2014, GaN Transistors for Efficient Power Conversion, P31

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