Phase change and electrical characteristics of Ge-Se-Te alloys

被引：15
|
作者：
Lee, Eui-Bok [1 ,2 ]
Ju, Byeong-Kwon [2 ]
Kim, Yong-Tae [1 ]
机构：
[1] Korea Inst Sci & Technol, Semicond Mat & Device Lab, Seoul 130650, South Korea
[2] Korea Univ, Display & Nanosyst Lab, Seoul, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期
基金：
新加坡国家研究基金会;
关键词：
Phase change materials; Ge-Se-Te alloys; Chalcogenide; MEMORY; CRYSTALLIZATION; SB;
D O I：
10.1016/j.mee.2009.03.089
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1950 / 1953
页数：4
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