Phase change and electrical characteristics of Ge-Se-Te alloys

被引：15

作者：

Lee, Eui-Bok ^{[1
,2
]}

Ju, Byeong-Kwon ^{[2
]}

Kim, Yong-Tae ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Semicond Mat & Device Lab, Seoul 130650, South Korea

[2] Korea Univ, Display & Nanosyst Lab, Seoul, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

基金：

新加坡国家研究基金会;

关键词：

Phase change materials; Ge-Se-Te alloys; Chalcogenide; MEMORY; CRYSTALLIZATION; SB;

D O I：

10.1016/j.mee.2009.03.089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1950 / 1953

页数：4

共 50 条

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MIN, SW
YANG, HM
CHEN, ZC
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[2] Study on the electrical properties and the effect of heat treatment on structure of Ge-Se-Te alloys
Fayek, SA
MATERIALS CHEMISTRY AND PHYSICS, 2000, 62 (02) : 95 - 102
[3] Calorimetric studies of the glassy alloys in the Ge-Se-Te system
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ARONSON, S
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[7] Assessment of physical parameters for quaternary antimony substituted Ge-Se-Te alloys
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[8] Assessment of physical parameters for quaternary antimony substituted Ge-Se-Te alloys
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[9] VITRIFICATION IN THE GE-S-SE, GE-S-TE, AND GE-SE-TE SYSTEMS
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[10] Transport properties of Ge-Se-Te glasses
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