CBE growth of GaN on GaAs(001) and (111)B substrates using monomethylhydrazine

被引：2

作者：

Sasaki, M

Yonemura, S

Nakayama, T

Shimoyama, N

Suemasu, T

Hasegawa, F

机构：

[1] Univ Tsukuba, Inst Appl Phys, Ctr Tsukuba Res Alliance, Tsukuba, Ibaraki 3058573, Japan

[2] Tri Chem Lab Inc, Yamanashi 4090112, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

关键词：

CBE; GaN; AlN buffer; monomethylhydrazine; mass spectrometry;

D O I：

10.1016/S0022-0248(99)00573-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Monomethylhydrazine (MMHy) is examined as a nitrogen source material for C-BE growth of nitride semiconductors on GaAs(0 0 1) and (1 1 1)B substrates. We find that the AlN buffer layer insertion is effective in obtaining a hexagonal GaN layer with high crystallinity on the GaAs(1 1 1)B substrate. From the mass spectrometric analysis during MMHy exposure to the GaAs and AIN surfaces, it is clarified that the effectiveness of the AIN buffer layer is due to the high reactivity of AIN surface to the MMHy decomposition. (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：373 / 377

页数：5

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