Optoelectronic Investigation of Sb-Doped Cu(In,Ga)Se2

被引：7

作者：

Mansfield, Lorelle M. ^{[1
]}

Kuciauskas, Darius ^{[1
]}

Dippo, Patricia ^{[1
]}

Li, Jian V. ^{[1
]}

Bowers, Karen ^{[1
]}

To, Bobby ^{[1
]}

DeHart, Clay ^{[1
]}

Ramanathan, Kannan ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 06期

关键词：

Admittance spectroscopy; Cu(In; Ga)Se-2; (CIGS); defects; photovoltaic cells; photoluminescence; Sb doping; thin films; RECOMBINATION; EFFICIENCY;

D O I：

10.1109/JPHOTOV.2015.2470082

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this study, we incorporated Sb into the precursor that was subsequently converted to Cu(In,Ga)Se-2 (CIGS) by a selenization process. We observed enhanced grain size and improved device performance compared with similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to explore the changes in native defect compensation and evaluate the origin of a lower energy PL peak that is not typically seen in CIGS.

引用

收藏

页码：1769 / 1774

页数：6

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