Ion beam induced intermixing of interface structures in W/Si multilayers

被引：0
作者：
Kessels, MJH
Verhoeven, J
Yakshin, AE
Tichelaar, FD
Bijkerk, F
机构：
[1] FOM, Inst Plasma Phys Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands
[2] FOM, Inst Atom & Mol Phys, NL-1098 SJ Amsterdam, Netherlands
[3] Natl Ctr HREM, NL-2628 AL Delft, Netherlands
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 222卷 / 3-4期
关键词：
multilayers; tungsten; silicon; reflectometry; electron microscopy; thin films; evaporation; ion bombardment; interfaces;
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The impact of energetic ions during fabrication of W/Si multilayers may result in interface layers with a gradually changing concentration, notably in the W-on-Si interface layer. This process may be employed to deliberately form a multilayer system with a graded refractive index within each period, in principle allowing an adjustment of the optical, wavelength-selective properties of the multilayer system. We also have given a first demonstration of a new method based on a combination of high-resolution TEM image analysis and grazing incidence X-ray reflectivity analysis to determine the in-depth density profile of a multilayer structure. (C) 2004 Elsevier B.V.. All rights reserved.
引用
收藏
页码：484 / 490
页数：7
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