Ion beam induced intermixing of interface structures in W/Si multilayers

被引：0
作者：
Kessels, MJH
Verhoeven, J
Yakshin, AE
Tichelaar, FD
Bijkerk, F
机构：
[1] FOM, Inst Plasma Phys Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands
[2] FOM, Inst Atom & Mol Phys, NL-1098 SJ Amsterdam, Netherlands
[3] Natl Ctr HREM, NL-2628 AL Delft, Netherlands
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 222卷 / 3-4期
关键词：
multilayers; tungsten; silicon; reflectometry; electron microscopy; thin films; evaporation; ion bombardment; interfaces;
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The impact of energetic ions during fabrication of W/Si multilayers may result in interface layers with a gradually changing concentration, notably in the W-on-Si interface layer. This process may be employed to deliberately form a multilayer system with a graded refractive index within each period, in principle allowing an adjustment of the optical, wavelength-selective properties of the multilayer system. We also have given a first demonstration of a new method based on a combination of high-resolution TEM image analysis and grazing incidence X-ray reflectivity analysis to determine the in-depth density profile of a multilayer structure. (C) 2004 Elsevier B.V.. All rights reserved.
引用
收藏
页码：484 / 490
页数：7
相关论文
共 50 条
[31]   Phonon, plasmon and electronic properties of surfaces and interfaces of periodic W/Si and Si/W multilayers [J].
Kumar, Niranjan ;
Kozakov, Alexey T. ;
Nezhdanov, Aleksey, V ;
Garakhin, Sergey A. ;
Polkovnikov, Vladimir N. ;
Chkhalo, Nikolay, I ;
Mashin, Aleksandr, I ;
Nikolskii, Anatolay, V ;
Scrjabin, Anton A. .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2021, 23 (28) :15076-15090
[32]   Performance and quality analysis of Mo-Si multilayers formed by ion-beam and magnetron sputtering for extreme ultraviolet lithography [J].
Hiruma, Kenji ;
Miyagaki, Shinji ;
Yanianashi, Hiromasa ;
Tanaka, Yuusuke ;
Nishiyama, Iwao .
THIN SOLID FILMS, 2008, 516 (08) :2050-2057
[33]   Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures [J].
Radek, Manuel ;
Liedke, Bartosz ;
Schmidt, Bernd ;
Voelskow, Matthias ;
Bischoff, Lothar ;
Hansen, John Lundsgaard ;
Larsen, Arne Nylandsted ;
Bougeard, Dominique ;
Boettger, Roman ;
Prucnal, Slawomir ;
Posselt, Matthias ;
Bracht, Hartmut .
MATERIALS, 2017, 10 (07)
[34]   Ion-beam induced hydrogen redistribution in a-Si:H-based triple layer structures [J].
Pantchev, B. ;
Danesh, P. ;
Schmidt, B. ;
Grambole, D. ;
Bischoff, L. .
16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS, 2010, 253
[35]   Interface effects in FeCo-Si magnetic multilayers [J].
Muller, DJ ;
Krist, T ;
SchubertBischoff, P ;
Mezei, F .
PHYSICA B, 1997, 234 :1050-1051
[36]   Dependence of interface layer thickness in FeCo-Si multilayers on sputtering parameters [J].
Cho, SJ ;
Krist, T ;
Mezei, F .
THIN SOLID FILMS, 2003, 444 (1-2) :158-164
[37]   Studies of structures elaborated by focused ion beam induced deposition [J].
Prestigiacomo, M ;
Roussel, L ;
Houël, A ;
Sudraud, P ;
Bedu, F ;
Tonneau, D ;
Safarov, V ;
Dallaporta, H .
MICROELECTRONIC ENGINEERING, 2004, 76 (1-4) :175-181
[38]   Ion-irradiation induced stress relaxation in metallic thin films and multilayers grown by ion beam sputtering [J].
Debelle, A ;
Michel, A ;
Abadias, G ;
Jaouen, C .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 242 (1-2) :461-465
[39]   Influence of layer thickness on amorphization behavior induced in the Ni-W multilayers by ion irradiation [J].
Li, ZF ;
Liu, BX .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2002, 71 (09) :2290-2294
[40]   Ion-beam synthesis of InSb nanocrystals at the Si/SiO2 interface [J].
Tyschenko, Ida ;
Zhang, Ruonan ;
Volodin, Vladimir ;
Popov, Vladimir .
MATERIALS LETTERS, 2022, 306
12345