Investigation on Na Acceptor Level in p-Type Na-Doped ZnMgO Thin Films Prepared by Pulsed Laser Deposition

被引：2

作者：

Huang, Jiyu ^{[1
]}

Chen, Cong ^{[1
]}

He, Haiping ^{[1
]}

Sha, Chuhan ^{[1
]}

Ye, Zhizhen ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Mat Sci & Engn, Cyrus Tang Ctr Sensor Mat & Applicat, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2019年 / 48卷 / 06期

基金：

中国国家自然科学基金;

关键词：

ZnMgO film; p-type doping; acceptor level; photoluminescence; ZNO MATERIALS; NANOCRYSTALS; FABRICATION;

D O I：

10.1007/s11664-019-07108-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Na-doped ZnMgO films have been deposited on quartz substrates by pulsed laser deposition and the effect of the oxygen pressure on their electrical properties investigated. The film deposited under optimal conditions exhibited p-type conductivity with representative hole concentration of 1.2x10(15)cm(-3), Hall mobility of 8.3cm(2)V(-1)s(-1), and resistivity of 6.7x10(2)cm. Temperature-dependent Hall measurements were used to confirm the p-type conductivity and determine the Na-related acceptor level in the ZnMgO films, which was estimated to be 483 +/- 21meV. Temperature-dependent photoluminescence revealed an acceptor level of about 460meV, close to the result determined by Hall measurements. The Na acceptor is deeper in ZnMgO than in ZnO due to the enlarged bandgap.

引用

页码：3554 / 3561

页数：8

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