Coulomb effects in type-II Ga(As)Sb quantum dots

被引：21

作者：

Gradkowski, Kamil ^{[1
]}

Ochalski, Tomasz J. ^{[1
]}

Williams, David P. ^{[1
]}

Healy, Sorcha B. ^{[1
]}

Tatebayashi, Jun ^{[2
]}

Balakrishnan, Ganesh ^{[2
]}

O'Reilly, Eoin P. ^{[1
]}

Huyet, Guillaume ^{[1
]}

Huffaker, Diana L. ^{[2
]}

机构：

[1] Tyndall Natl Inst, Cork, Ireland

[2] Univ Calif Los Angeles, Elect Engn & Calif NanoSyst Inst, Los Angeles, CA 90095 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 04期

关键词：

2 INTERACTING ELECTRONS; GASB;

D O I：

10.1002/pssb.200880630

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a detailed explanation of the blue-shift that is observed in Ga(As)Sb quntum dots (QD) with increasing pump power density by employing an 8-band k-p model with the Coulomb attractive potential added into the Hamiltonian. Two types of structures are considered: Ga(As)Sb QDs in a GaAs matrix and the same dots overgrown with an InGaAs quantum well (QW). We show that with increasing charge density the electron and hole energy levels shift relative to each other, which results in an increase of the optical transition energy (i.e., a blue-shift). The major contribution to the effect arises from the holes and is a result of their 3D confinement inside the dot. Additionally with increasing charge density the electrons move closer to the dot which improves the oscillator strength of the grounds state optical transition. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：752 / 755

页数：4

共 17 条

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