Gate-tuned quantum Hall states in Dirac semimetal (Cd1-xZnx)3As2

被引：58

作者：

Nishihaya, Shinichi ^{[1
,2
]}

Uchida, Masaki ^{[1
,2
]}

Nakazawa, Yusuke ^{[1
,2
]}

Kriener, Markus ^{[3
]}

Kozuka, Yusuke ^{[1
,2
]}

Taguchi, Yasujiro ^{[3
]}

Kawasaki, Masashi ^{[1
,2
,3
]}

机构：

[1] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[2] Univ Tokyo, QPEC, Tokyo 1138656, Japan

[3] RIKEN, CEMS, Wako, Saitama 3510198, Japan

来源：

SCIENCE ADVANCES | 2018年 / 4卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

NEGATIVE MAGNETORESISTANCE; PHASE; DISCOVERY; MOBILITY;

D O I：

10.1126/sciadv.aar5668

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The recent discovery of topological Dirac semimetals (DSMs) has provoked intense curiosity not only regarding Weyl physics in solids but also about topological phase transitions originating from DSMs. One specific area of interest is controlling the dimensionality to realize two-dimensional quantum phases such as quantum Hall and quantum spin Hall states. For investigating these phases, the Fermi level is a key controlling parameter. From this perspective, we report the carrier density control of quantum Hall states realized in thin films of DSM Cd3As2. Chemical doping of Zn combined with electrostatic gating has enabled us to tune the carrier density both over a wide range and continuously, even across the charge neutrality point. Comprehensive analyses of gate-tuned quantum transport have revealed Landau-level formation from linearly dispersed sub-bands and its contribution to the quantum Hall states. Our findings also pave the way for investigating the low-energy physics near the Dirac points of DSMs.

引用

页数：8

共 42 条

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