A 4.8-6 GHz IEEE 802.11a WLAN SiGe-bipolar power amplifier with on-chip output matching

被引：0

作者：

Bakalski, Winfried ^{[1
]}

Vasylyev, Andriy ^{[1
]}

Simbuerger, Werner ^{[1
]}

Kaell, Marcus ^{[1
]}

Schmid, Alfons ^{[1
]}

Kitlinski, Krzysztof ^{[1
]}

机构：

[1] Infineon Technol AG, D-81609 Munich, Germany

来源：

GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated 4.8 - 6GHz Wireless LAN SiGe-bipolar power amplifier chip requiring no external components was realized using the small die size of only 1 x 0.9 mm(2). At 1 V to 2.4 V, the maximum output power level is 19 dBm (22% PAE) to 26.3 dBm (28.5 % PAE) at 5.25 GHz with a maximum small signal gain of 33dB. The maximum average output power for a maximum 3 % Error Vector Magnitude (EVM) is 16dBm. The PA survives a VSWR of 50.

引用

页码：481 / 483

页数：3