A 4.8-6 GHz IEEE 802.11a WLAN SiGe-bipolar power amplifier with on-chip output matching

被引：0
|
作者：
Bakalski, Winfried [1 ]
Vasylyev, Andriy [1 ]
Simbuerger, Werner [1 ]
Kaell, Marcus [1 ]
Schmid, Alfons [1 ]
Kitlinski, Krzysztof [1 ]
机构：
[1] Infineon Technol AG, D-81609 Munich, Germany
来源：
GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully integrated 4.8 - 6GHz Wireless LAN SiGe-bipolar power amplifier chip requiring no external components was realized using the small die size of only 1 x 0.9 mm(2). At 1 V to 2.4 V, the maximum output power level is 19 dBm (22% PAE) to 26.3 dBm (28.5 % PAE) at 5.25 GHz with a maximum small signal gain of 33dB. The maximum average output power for a maximum 3 % Error Vector Magnitude (EVM) is 16dBm. The PA survives a VSWR of 50.
引用
收藏
页码：481 / 483
页数：3
相关论文
共 41 条
  • [31] A Wide Tuning Range High Output Power 56-74 GHz VCO With On-Chip Transformer Load in SiGe Technology
    Nasr, I.
    Laemmle, B.
    Knapp, H.
    Fischer, G.
    Weigel, R.
    Kissinger, D.
    2012 IEEE 12TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2012, : 49 - 52
  • [32] Fully Integrated 23dBm Transmit chain with on-chip Power Amplifier and Balun for 802.11a application in standard 45nm CMOS process
    Kidwai, Adil A.
    Nazimov, Anna
    Eilat, Yishai
    Degani, Ofir
    RFIC: 2009 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2009, : 243 - +
  • [33] A 60-GHz power amplifier design with on-chip tunable load-matching network and power detect in 90-nm CMOS
    Zheng, Zonghua
    Sun, Lingling
    Liu, Jun
    IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING, 2017, 12 (01) : 140 - 146
  • [34] A quad-band GSM/EDGE-compliant SiGe-bipolar power amplifier with 35.9 dBm/32.3 dBm output power at 56%/44% PAE in low/high-band
    Sogl, Bernhard
    Bakalski, Winfried
    Zannoth, Markus
    Asam, Michael
    Kapfelsperger, Boris
    Berkner, Joerg
    Eisener, Berrid
    Oesterreicher, Wilfried
    Rampf, Erwin
    Scholtz, Arpad L.
    Klepser, Bernd-Ulrich
    PROCEEDINGS OF THE 2007 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2007, : 98 - +
  • [35] A fully integrated 5.3-GHz 2.4-v 0.3-W SiGe bipolar power amplifier with 50-Ω output
    Bakalski, W
    Simbürger, W
    Thüringer, R
    Vasylyev, A
    Scholtz, AL
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (07) : 1006 - 1014
  • [36] A 2.4-GHz 24-dBm SOI CMOS Power Amplifier with On-Chip Tunable Matching Network for Enhanced Efficiency in Back-Off
    Carrara, Francesco
    Presti, Calogero D.
    Palmisano, Giuseppe
    2009 PROCEEDINGS OF ESSCIRC, 2009, : 177 - 180
  • [37] A LOW-POWER, HIGH-GAIN, AND LOW-NOISE 5-6 GHz CMOS LOW-NOISE AMPLIFIER WITH EXCELLENT REVERSE ISOLATION FOR IEEE 802.11 n/ac WLAN APPLICATIONS
    Lin, Yo-Sheng
    Liu, Run-Chi
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2015, 57 (02) : 296 - 304
  • [38] Linearity enhanced 2.4 GHz WLAN HBT power amplifier using digitally-controlled tunable output matching network with pHEMT switch in GaAs BiFET technology
    Yoon, S. -W.
    Kim, S-I.
    ELECTRONICS LETTERS, 2010, 46 (23) : 1573 - 1574
  • [39] A Highly Integrated Single Chip 5-6 GHz Front-end IC Based on SiGe BiCMOS that Enhances 802.11ac WLAN Radio Front-end Designs
    Huang, Chun-Wen Paul
    Christainsen, Kenny
    Nabokin, Sergey
    Mirzayantz, Rafik
    Allum, Justin
    Chen, Andrew
    Lam, Lui
    McPartlin, Mike
    Doherty, Mark
    Vaillancourt, Bill
    PROCEEDINGS OF THE 2015 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC 2015), 2015, : 227 - 230
  • [40] An 0.4-2.8 GHz CMOS Power Amplifier with On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1-38.6% PAE and 21 dBm Maximum Linear Output Power
    Mariappan, Selvakumar
    Rajendran, Jagadheswaran
    Yusof, Yusman M.
    Noh, Norlaili M.
    Yarman, Binboga Siddik
    IEEE Access, 2021, 9 : 48831 - 48840
12345