A 4.8-6 GHz IEEE 802.11a WLAN SiGe-bipolar power amplifier with on-chip output matching

被引：0
|
作者：
Bakalski, Winfried [1 ]
Vasylyev, Andriy [1 ]
Simbuerger, Werner [1 ]
Kaell, Marcus [1 ]
Schmid, Alfons [1 ]
Kitlinski, Krzysztof [1 ]
机构：
[1] Infineon Technol AG, D-81609 Munich, Germany
来源：
GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully integrated 4.8 - 6GHz Wireless LAN SiGe-bipolar power amplifier chip requiring no external components was realized using the small die size of only 1 x 0.9 mm(2). At 1 V to 2.4 V, the maximum output power level is 19 dBm (22% PAE) to 26.3 dBm (28.5 % PAE) at 5.25 GHz with a maximum small signal gain of 33dB. The maximum average output power for a maximum 3 % Error Vector Magnitude (EVM) is 16dBm. The PA survives a VSWR of 50.
引用
收藏
页码：481 / 483
页数：3
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