Luminance Behavior of Lithium-Doped ZnO Nanowires with p-Type Conduction Characteristics

被引：3

作者：

Ko, Won Bae ^{[1
]}

Lee, Jun Seok ^{[1
]}

Lee, Sang Hyo ^{[1
]}

Cha, Seung Nam ^{[2
]}

Sohn, Jung Inn ^{[2
]}

Kim, Jong Min ^{[2
]}

Park, Young Jun ^{[3
]}

Kim, Hyun Jung ^{[4
]}

Hong, Jin Pyo ^{[1
]}

机构：

[1] Hanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Device Lab, Seoul 133791, South Korea

[2] Univ Oxford, Dept Engn Sci, Oxford OX1 3PJ, England

[3] Samsung Adv Inst Technol, Frontier Res Lab, Yongin 446712, South Korea

[4] Dongguk Univ, Dept Semicond Sci, Seoul 100715, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2013年 / 13卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

Zinc Oxide; p-Type Characteristics; Lithium; Nanowires; FILMS;

D O I：

10.1166/jnn.2013.7700

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The present study describes the room-temperature cathodeluminescence (CL) and temperature-dependent photoluminescence (PL) properties of p-type lithium (Li)-doped zinc oxide (ZnO) nanowires (NWs) grown by hydrothermal doping and post-annealing processes. A ZnO thin film was used as a seed layer in NW growth. The emission wavelengths and intensities of undoped ZnO NWs and p-type Li-doped ZnO NWs were analyzed for comparison. CL and PL observations of post-annealed p-type Li-doped ZnO NWs clearly exhibited a dominant sharp band-edge emission. Finally, a n-type ZnO thin film/p-type annealed Li-doped ZnO NW homojunction diode was prepared to confirm the p-type conduction of annealed Li-doped ZnO NWs as well as the structural properties measured by transmission electron microscopy.

引用

页码：6231 / 6235

页数：5

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