Temperature dependence of the electronic states of Kondo semiconductor YbB12

被引：9

作者：

Takeda, Y

Arita, M

Higashiguchi, M

Shimada, K

Sawada, M

Sato, H

Nakatake, M

Namatame, H

Taniguchi, M

Iga, F

Takabatake, T

Takata, K

Ikenaga, E

Yabashi, M

Miwa, D

Nishino, Y

Tamasaku, K

Ishikawa, T

Shin, S

Kobayashi, K

机构：

[1] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7398526, Japan

[2] Hiroshima Univ, Fac Sci, Higashihiroshima 7398526, Japan

[3] Inst Phys & Chem Res, SPring8, Wako, Saitama 6795185, Japan

[4] Univ Tokyo, Grad Sch Frontier Sci, Tokyo 2778562, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2004年 / 351卷 / 3-4期

关键词：

photoemission spectroscopy; Kondo semiconductor; YbB12;

D O I：

10.1016/j.physb.2004.06.027

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The temperature dependences of the Yb 4f and 3d states of Kondo semiconductor YbB12 single crystal have been studied by high-resolution photoemission spectroscopy taken at hv = 100 and 5951 eV. The Yb2+ 4f(7/2) state at the Fermi level is enhanced on cooling. With improved energy resolution, we discover an additional quasi-particle peak at 15 meV that developes below 60 K. From the Yb 3d spectrum at 22 K, the Yb valence is estimated to be similar to2.88. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：286 / 288

页数：3

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