Random Yield Prediction Based on a Stochastic Layout Sensitivity Model

被引：8

作者：

Ghaida, Rani S. ^{[1
]}

Doniger, Ken ^{[2
]}

Zarkesh-Ha, Payman ^{[1
]}

机构：

[1] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA

[2] Abbott Labs, Alameda, CA 94502 USA

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2009年 / 22卷 / 03期

关键词：

Critical area analysis; defect density; design for manufacturability; layout sensitivity; random yield modeling and prediction; CRITICAL AREA; VLSI; CAD;

D O I：

10.1109/TSM.2009.2024821

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Yield loss caused by random defects is an important manufacturability concern. Random yield of modern integrated circuits is associated with layout sensitivity to defects defined as the ratio of critical area to the overall layout area. This paper proposes a methodology to predict random yield with high fidelity based on a stochastic layout sensitivity model that uses very basic layout information. The model has very important applications including pre-layout yield prediction and yield forecasting for future process technologies.

引用

页码：329 / 337

页数：9

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