N3-sensitized TiO2 films:: In situ proton exchange toward open-circuit photovoltage enhancement

被引:45
作者
Wang, Zhong-Sheng [1 ]
Sugihara, Hideki [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, AIST, Tsukuba, Ibaraki 3058565, Japan
关键词
D O I
10.1021/la061315g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Protons of N3, cis-bis(thiocyanato) bis(2,2'-bipyridyl-4,4'-dicarboxylic acid) ruthenium(II), were in situ exchanged on N-3-loaded TiO2 films with alkali-metal, tetrabutylammonium, and guanidinium cations. This simple strategy improved the open-circuit photovoltage (V-oc) significantly, resulting in enhancement of the power conversion efficiency by 10-25%. Electrochemical impedance spectra revealed that the in situ proton exchange of the N-3-loaded film suppressed charge recombination between injected electrons and I-3(-) ions in the electrolyte, which, together with the negative shift of the conduction band edge for TiO2, may account for the remarkably increased Voc upon proton exchange of N-3.
引用
收藏
页码:9718 / 9722
页数:5
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