Radiation-induced statistical uncertainty in the threshold voltage measurement of MOSFET dosimeters

被引：15
作者：
Benson, C
Price, RA
Silvie, J
Jaksic, A
Joyce, MJ
机构：
[1] Univ Lancaster, Dept Engn, Lancaster LA1 4YR, England
[2] Clatterbridge Ctr Oncol, Dept Phys, Computat & Appl Dosimetry Res Grp, Wirral CH63 4JX, Merseyside, England
[3] BAE Syst Marine, Barrow In Furness LA14 1AF, Cumbria, England
[4] Natl Microelect Res Ctr, Cork, Ireland
来源：
PHYSICS IN MEDICINE AND BIOLOGY | 2004年 / 49卷 / 14期
关键词：
D O I：
10.1088/0031-9155/49/14/009
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
The results of a recent study on the limiting uncertainties in the measurement of photon radiation dose with MOSFET dosimeters are reported. The statistical uncertainty in dose measurement from a single device has been measured before and after irradiation. The resulting increase in 1/f noise with radiation dose has been investigated via various analytical models. The limit of uncertainty in the ubiquitous linear trend of threshold voltage with dose has been measured and compared to two nonlinear models. Inter-device uncertainty has been investigated in a group of 40 devices, and preliminary evidence for kurtosis and skewness in the distributions for devices without external bias has been observed.
引用
收藏
页码：3145 / 3159
页数：15
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