X-ray topography of polydiacetylene single crystals prepared by using physical vapor growth technique

被引:4
作者
Jo, Sadaharu [1 ]
Yoshikawa, Hitoshi [1 ]
Fujii, Akane [1 ]
Takenaga, Mitsuru [1 ]
机构
[1] Tokyo Univ Sci, Dept Mat Sci & Environm Engn, Onoda, Yamaguchi 7560884, Japan
关键词
polydiacetylene; physical vapor growth; single crystal; X-ray topography; atomic force microscopy;
D O I
10.1016/j.apsusc.2005.08.097
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The lattice defects in polydiacetylene (PDA) single crystals prepared using physical vapor growth were investigated by white beam X-ray topography. Line patterns along the [001] and [102] directions were clearly observed. Appearance of the line patterns along the [001] direction proves the polymerization direction predicted by Hadicke et al. The topographic results are in good agreement with the surface morphologies investigated by atomic force microscopy (AFM). (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:7383 / 7388
页数:6
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