Solution-Processed, High Performance Aluminum Indium Oxide Thin-Film Transistors Fabricated at Low Temperature

被引：48

作者：

Hwang, Young Hwan ^{[1
]}

Jeon, Jun Hyuck ^{[1
]}

Seo, Seok-Jun ^{[1
]}

Bae, Byeong-Soo ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Lab Opt Mat & Coating, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 09期

关键词：

aluminium compounds; heat treatment; semiconductor thin films; thin film transistors; transparency; X-ray diffraction; ZINC-OXIDE; SEMICONDUCTORS; TRANSPORT; PROGRESS; DEVICE;

D O I：

10.1149/1.3156830

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin-film transistors (TFTs) with aluminum indium oxide channel layers were fabricated via a simple and low cost solution process. The substitution of Al on In sites in the In(2)O(3) lattice was verified by X-ray diffraction analysis. The maximum heat-treatment temperature of these transistors was 350 degrees C, and the resultant thin films were highly transparent (with >90% transmittance). The fabricated TFTs operated in an enhancement mode on a positive bias and showed an n-type semiconductor behavior. They exhibited a channel mobility of 19.6 cm(2)/V s, a subthreshold slope of 0.3 V/decade, and an on-to-off current ratio greater than 10(8).

引用

页码：H336 / H339

页数：4

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