Dramatic improvement of performance of visible hydrogenated amorphous silicon carbide based p-i-n thin-film light-emitting diodes by two-step hydrogenation

被引：12

作者：

Lee, JW ^{[1
]}

Lim, KS ^{[1
]}

机构：

[1] HYUNDAI ELECT IND CO LTD,KYONGGI DO,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 04期

关键词：

D O I：

10.1063/1.117782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of two-step hydrogenation on the performance of visible p-i-n thin-film light-emitting diode (TFLED) have been investigated. The TFLEDs were fabricated by a photochemical vapor deposition (CVD) method, A hydrogenation process was performed in two steps: One was an in situ hydrogenation process using a photo-CVD system and the other an ex situ hydrogenation process using a plasma apparatus after TFLED fabrication. It was found that the performance of visible a-SiC:H-based p-i-n TFLEDs was drastically improved by a two-step hydrogenation process. The threshold voltage decreased by about 3 V, the electroluminescence peak shifted towards a shorter wavelength, from 680 to 590 nm, add the brightness increased from 1.3 to 128 cd/m(2). (C) 1996 American Institute of Physics.

引用

页码：547 / 549

页数：3

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