Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

被引：3

作者：

Agrawal, Ashish ^{[1
]}

Barth, Michael ^{[1
]}

Madan, Himanshu ^{[1
]}

Lee, Yi-Jing ^{[2
]}

Lin, You-Ru ^{[2
]}

Wu, Cheng-Hsien ^{[2
]}

Ko, Chih-Hsin ^{[2
]}

Wann, Clement H. ^{[2
]}

Loubychev, Dmitri ^{[3
]}

Liu, Amy ^{[3
]}

Fastenau, Joel ^{[3
]}

Lindemuth, Jeff ^{[4
]}

Datta, Suman ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[2] Taiwan Semicond Mfg Co, Hsinchu 30078, Taiwan

[3] IQE Inc, Bethlehem, PA 18015 USA

[4] Lake Shore Cryotron, Westerville, OH 43082 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 05期

关键词：

14;

D O I：

10.1063/1.4892403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5x lower effective mass for s-InSb compared to s-Ge quantum well at 1.9 x 10(12) cm(-2). Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 14 条

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