Photoelastic coupling in gallium arsenide optomechanical disk resonators

被引：73

作者：

Baker, Christopher ^{[1
]}

Hease, William ^{[1
]}

Dac-Trung Nguyen ^{[1
]}

Andronico, Alessio ^{[1
]}

Ducci, Sara ^{[1
]}

Leo, Giuseppe ^{[1
]}

Favero, Ivan ^{[1
]}

机构：

[1] Univ Paris Diderot, Sorbonne Paris Cite, Lab Mat & Phenomenes Quant, CNRS UMR 7162, F-75013 Paris, France

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 12期

关键词：

QUANTUM GROUND-STATE; GAAS; OSCILLATOR; SILICON; STRESS; FORCES;

D O I：

10.1364/OE.22.014072

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We analyze the magnitude of the radiation pressure and electrostrictive stresses exerted by light confined inside GaAs semiconductor WGM optomechanical disk resonators, through analytical and numerical means, and find the electrostrictive stress to be of prime importance. We investigate the geometric and photoelastic optomechanical coupling resulting respectively from the deformation of the disk boundary and from the strain-induced refractive index changes in the material, for various mechanical modes of the disks. Photoelastic optomechanical coupling is shown to be a predominant coupling mechanism for certain disk dimensions and mechanical modes, leading to total coupling g(om) and g(0) reaching respectively 3 THz/nm and 4 MHz. Finally, we point towards ways to maximize the photoelastic coupling in GaAs disk resonators, and we provide some upper bounds for its value in various geometries. (C) 2014 Optical Society of America

引用

页码：14072 / 14086

页数：15

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