Exciton aggregation induced photoluminescence enhancement of monolayer WS2

被引:11
作者
Cheng, Guanghui [1 ]
Li, Baikui [1 ,2 ]
Zhao, Chunyu [1 ,3 ]
Jin, Zijing [1 ]
Li, Hui [1 ]
Lau, Kei May [3 ]
Wang, Jiannong [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
[2] Shenzhen Univ, Coll Phys & Optoelect Engn, Nanhai Ave 3688, Shenzhen, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
关键词
LIGHT-EMITTING-DIODES; ENERGY-TRANSFER; DEFECTS;
D O I
10.1063/1.5096206
中图分类号
O59 [应用物理学];
学科分类号
摘要
Defect mediated nonradiative recombination limits the photoluminescence (PL) quantum yield of transition metal dichalcogenide monolayers (MLs). In this work, the enhancement of the PL intensity of ML WS2 is reported in a van der Waals heterostructure of WS2 ML and InGaN quantum dots (QDs) under excitation with photon energy larger than the bandgaps of both WS2 and QDs. The mechanism of this PL enhancement is due to the aggregation of excitons in WS2 ML toward the QD sites to form an interfacial bound state, which effectively mitigates the influence of defects. This exciton aggregation induced enhancement of PL intensity is more pronounced at low temperatures and under low power excitations. The lifetime and diffusion coefficient of the excitons in WS2 ML are also measured to validate the aggregation scenario.
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页数:4
相关论文
共 29 条
[1]   Surface Defects on Natural MoS2 [J].
Addou, Rafik ;
Colombo, Luigi ;
Wallace, Robert M. .
ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (22) :11921-11929
[2]   Near-unity photoluminescence quantum yield in MoS2 [J].
Amani, Matin ;
Lien, Der-Hsien ;
Kiriya, Daisuke ;
Xiao, Jun ;
Azcatl, Angelica ;
Noh, Jiyoung ;
Madhvapathy, Surabhi R. ;
Addou, Rafik ;
Santosh, K. C. ;
Dubey, Madan ;
Cho, Kyeongjae ;
Wallace, Robert M. ;
Lee, Si-Chen ;
He, Jr-Hau ;
Ager, Joel W., III ;
Zhang, Xiang ;
Yablonovitch, Eli ;
Javey, Ali .
SCIENCE, 2015, 350 (6264) :1065-1068
[3]  
[Anonymous], 2017, MEDICINE, V96, pe6504, DOI DOI 10.1103/PhysRevB.96.155307
[4]   Electrostatic Screening of Charged Defects in Monolayer MoS2 [J].
Atallah, T. L. ;
Wang, J. ;
Bosch, M. ;
Seo, D. ;
Burke, R. A. ;
Moneer, O. ;
Zhu, Justin ;
Theibault, M. ;
Brus, L. E. ;
Hone, J. ;
Zhu, X. -Y. .
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2017, 8 (10) :2148-2152
[5]  
Baugher BWH, 2014, NAT NANOTECHNOL, V9, P262, DOI [10.1038/nnano.2014.25, 10.1038/NNANO.2014.25]
[6]   Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots [J].
Cheng, Guanghui ;
Li, Baikui ;
Zhao, Chunyu ;
Yan, Xin ;
Wang, Hong ;
Lau, Kei May ;
Wang, Jiannong .
NANO LETTERS, 2018, 18 (09) :5640-5645
[7]   Revealing Defect-State Photoluminescence in Monolayer WS2 by Cryogenic Laser Processing [J].
He, Zhengyu ;
Wang, Xiaochen ;
Xu, Wenshuo ;
Zhou, Yingqiu ;
Sheng, Yuewen ;
Rong, Youmin ;
Smith, Jason M. ;
Warner, Jamie H. .
ACS NANO, 2016, 10 (06) :5847-5855
[8]   Exciton Diffusion and Halo Effects in Monolayer Semiconductors [J].
Kulig, Marvin ;
Zipfel, Jonas ;
Nagler, Philipp ;
Blanter, Sofia ;
Schueller, Christian ;
Korn, Tobias ;
Paradiso, Nicola ;
Glazov, Mikhail M. ;
Chernikov, Alexey .
PHYSICAL REVIEW LETTERS, 2018, 120 (20)
[9]   Influence of the substrate material on the optical properties of tungsten diselenide monolayers [J].
Lippert, Sina ;
Schneider, Lorenz Maximilian ;
Renaud, Dylan ;
Kyung Nam Kang ;
Ajayi, Obafunso ;
Kuhnert, Jan ;
Halbich, Marc-Uwe ;
Abdulmunem, Oday M. ;
Lin, Xing ;
Hassoon, Khaleel ;
Edalati-Boostan, Saeideh ;
Kim, Young Duck ;
Heimbrodt, Wolfram ;
Yang, Eui-Hyeok ;
Hone, James C. ;
Rahimi-Iman, Arash .
2D MATERIALS, 2017, 4 (02)
[10]   Giant photoluminescence enhancement in monolayer WS2 by energy transfer from CsPbBr3 quantum dots [J].
Liu, Yu ;
Li, Han ;
Zheng, Xin ;
Cheng, Xiangai ;
Jiang, Tian .
OPTICAL MATERIALS EXPRESS, 2017, 7 (04) :1327-1334