Circuit Model for Double-Energy-Level Trap Centers in GaN HEMTs

被引：3
作者：
Albahrani, Sayed Ali [1 ]
Parker, Anthony [1 ]
Heimlich, Michael [1 ,2 ]
机构：
[1] Macquarie Univ, Sydney, NSW 2109, Australia
[2] Univ Technol Sydney, Sydney, NSW 2007, Australia
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 03期
关键词：
GaN high-electron-mobility transistor (HEMT); microwave FET; multiple-energy-level (MEL) trap; semiconductor device measurement; semiconductor device modeling; single-energy-level (SEL) trap; trapping; ALGAN/GAN HEMTS; INTERMODULATION; DISPERSION; POWER; FETS;
D O I：
10.1109/TED.2017.2650241
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurement results performed on a GaN high-electron-mobility transistor that show the presence of a double-energy-level (DEL) trap center in the device are presented. A novel, yet simple, circuit implementation of a DEL trap center in an FET is presented that is immediately extendable to a trap center with more than two energy levels. The model is based on the Shockley-Read-Hall statistics of the trapping process. The implementation is suitable for both time-domain and harmonic-balance simulations. Simulation results validate the proposed model.
引用
收藏
页码：998 / 1006
页数：9
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