A novel test structure for OxRRAM process variability evaluation

被引：2

作者：

Aziza, H. ^{[1
]}

Bocquet, M. ^{[1
]}

Portal, J. -M. ^{[1
]}

Moreau, M. ^{[1
]}

Muller, C. ^{[1
]}

机构：

[1] Univ Aix Marseille, IM2NP UMR CNRS 7334, Marseille, France

来源：

MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2013.07.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Common problems with resistive Oxide-based Resistive Random Access Memory (so-called OxRRAM) are related to high variability in operating conditions and low yield. Although research has taken steps to resolve these issues, variability remains an important characteristic for OxRRAMs. In this paper, a test structure consisting of non-addressable OxRRAM cells with parallel connection of all memory elements is introduced. The test structure provides useful information regarding OxRRAM variability. The test structure can be used as a powerful tool for process variability monitoring during a new process technology introduction but also for marginal cell populations detection during process maturity. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1208 / 1212

页数：5

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