Effect of Substrate Effcut Angle on AlGaInP and GaInP Solar Cells Grown by Molecular Beam Epitaxy

We have studied characteristics of similar to 2.0 eV AlGaInP and similar to 4.9 eV GaInP solar cells on misoriented GaAs substrates grown by molecular beam epitaxy (MBE). Lattice-matched AlGaInP solar cells are of interest for space and concentrator photovoltaics, but there have been relatively few reports on such cells grown by MBE. Open circuit voltages for GaInP cells ranged from 1.29-1.30 V, while AlGaInP cells ranged from 1.35-1.37 V. The bandgap-voltage offset (W-OC) of GaInP cells decreased from 575 mV to 565 mV as misorientation angle increased from 00 to 10, while W-oc, for AlGaInP cells remained nearly constant at 620 mV. Internal quantum efficiency (IQE) measurements show that current collection for AlGaInP cells is lower than in GaInP and indicates the need for a thinner emitter with good surface passivation; no trend in IQE was observed as a function of offcut. Although W-oc, for AlGaInP was slightly higher than in GaInP, we believe that further optimization will allow MBE-grown AlGaInP to be a promising candidate for future top cell applications.