Adsorption of 3d transition-metal atom on InSe monolayer: A first-principles study

被引：48

作者：

Ju, Weiwei ^{[1
]}

Li, Tongwei ^{[1
]}

Zhou, Qingxiao ^{[1
]}

Li, Haisheng ^{[1
]}

Li, Xiaohong ^{[1
]}

Ma, Dongwei ^{[2
]}

机构：

[1] Henan Univ Sci & Technol, Coll Phys & Engn, Luoyang 471023, Peoples R China

[2] Anyang Normal Univ, Sch Phys, Anyang 455000, Peoples R China

来源：

COMPUTATIONAL MATERIALS SCIENCE | 2018年 / 150卷

基金：

中国国家自然科学基金;

关键词：

First-principles calculation; InSe monolayer; 3d transition metal atoms; Adsorption; Magnetism; TOTAL-ENERGY CALCULATIONS; ELECTRON-MOBILITY; PHOSPHORENE; TRANSISTORS; NANOSHEETS; GRAPHENE; GAS;

D O I：

10.1016/j.commatsci.2018.03.067

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The adsorption of 3d transition metal (TM) atoms (from Sc to Zn) on the InSe monolayer is studied by using density functional theory. The most preferable adsorption site is on top of In atoms for Sc, Ti, and V atoms, while the other seven 3d TM atoms (from Cr to Zn) are found to prefer the hollow adsorption site of InSe monolayer. The sizable adsorption energies are obtained for these systems except Zn-InSe system. The electrons are transferred from the adsorbed TM atoms to the support, thus a n-doping effect is achieved in the InSe monolayer by the TM atoms adsorption. The interesting magnetic properties are exhibited in those TM-InSe systems for TM from Sc to Co, which can be understood based on the orbital alignments and occupations of adsorbed TM atoms. The spin configurations are listed for each system. Our results indicate that great potential exists in these systems for 2D InSe utilization in nanoelectronics and spintronics.

引用

页码：33 / 41

页数：9

共 50 条

[11] Performance improvement of multilayer InSe transistors with optimized metal contacts [J].

Feng, Wei ;

Zhou, Xin ;

Tian, Wei Quan ;

Zheng, Wei ;

Hu, PingAn .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (05) :3653-3658

[12] Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface [J].

Feng, Wei ;

Zheng, Wei ;

Cao, Wenwu ;

Hu, PingAn .

ADVANCED MATERIALS, 2014, 26 (38) :6587-6593

[13] Transition Metal Doped Phosphorene: First-Principles Study [J].

Hashmi, Arqum ;

Hong, Jisang .

JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (17) :9198-9204

[14]

Heyd J, 2006, J CHEM PHYS, V124, DOI [10.1063/1.2204597, 10.1063/1.1564060]

[15] Silicene: a review of recent experimental and theoretical investigations [J].

Houssa, M. ;

Dimoulas, A. ;

Molle, A. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (25)

[16] Toward the Controlled Synthesis of Hexagonal Boron Nitride Films [J].

Ismach, Ariel ;

Chou, Harry ;

Ferrer, Domingo A. ;

Wu, Yaping ;

McDonnell, Stephen ;

Floresca, Herman C. ;

Covacevich, Alan ;

Pope, Cody ;

Piner, Richard ;

Kim, Moon J. ;

Wallace, Robert M. ;

Colombo, Luigi ;

Ruoff, Rodney S. .

ACS NANO, 2012, 6 (07) :6378-6385

[17] Embedding Transition-Metal Atoms in Graphene: Structure, Bonding, and Magnetism [J].

Krasheninnikov, A. V. ;

Lehtinen, P. O. ;

Foster, A. S. ;

Pyykko, P. ;

Nieminen, R. M. .

PHYSICAL REVIEW LETTERS, 2009, 102 (12)

[18] Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J].

Kresse, G ;

Furthmuller, J .

PHYSICAL REVIEW B, 1996, 54 (16) :11169-11186

[19] Photogeneration and Mobility of Charge Carriers in Atomically Thin Colloidal InSe Nanosheets Probed by Ultrafast Terahertz Spectroscopy [J].

Lauth, Jannika ;

Kulkarni, Aditya ;

Spoor, Frank C. M. ;

Renaud, Nicolas ;

Grozema, Ferdinand C. ;

Houtepen, Arjan J. ;

Schins, Juleon M. ;

Kinge, Sachin ;

Siebbeles, Laurens D. A. .

JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2016, 7 (20) :4191-4196

[20] Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe [J].

Lei, Sidong ;

Ge, Liehui ;

Najmaei, Sina ;

George, Antony ;

Kappera, Rajesh ;

Lou, Jun ;

Chhowalla, Manish ;

Yamaguchi, Hisato ;

Gupta, Gautam ;

Vajtai, Robert ;

Mohite, Aditya D. ;

Ajayan, Pulickel M. .

ACS NANO, 2014, 8 (02) :1263-1272

← 1 2 3 4 5 →