n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation

被引：14
作者：
Katamune, Yuki [1 ]
Mori, Daichi [1 ]
Arikawa, Daisuke [1 ]
Izumi, Akira [1 ]
Shimaoka, Takehiro [2 ]
Ichikawa, Kimiyoshi [2 ]
Koizumi, Satoshi [2 ]
机构：
[1] Kyushu Inst Technol, Dept Elect & Elect Engn, 1-1 Sensuicho, Kitakyushu, Fukuoka 8048550, Japan
[2] Natl Inst Mat Sci, Elect & Elect Mat Field, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2020年 / 126卷 / 11期
关键词：
Diamond; n-type doping; Hot-filament CVD; Hall effect; Secondary-ion mass spectrometry; BIPOLAR JUNCTION TRANSISTOR; DEVICE; TECHNOLOGY; FILMS; RESISTANCE; VOLTAGE; DIODES;
D O I：
10.1007/s00339-020-04060-w
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial growth of n-type semiconductor diamond films on (111)-oriented diamond has been achieved by hot-filament chemical vapor deposition (HFCVD) using a methane source and a trimethylphosphine dopant source. Secondary-ion mass spectrometry showed that the phosphorus atoms are incorporated into the films in the concentration range of 10(18)-10(19) cm(-3)from the vapor phase. Hall-effect measurements confirmed n-type conductivity in a wide temperature range up to 873 K. Electrons are thermally activated from a phosphorus donor level of approximately 0.57 eV as dominant carriers under the presence of tungsten atoms with concentrations of around 10(18) cm(-3)from filaments. These results indicate that HFCVD has the potential to be applied to an n-type doping process for fabricating diamond electronic devices in the phosphorus concentration range of not lower than 10(18) cm(-3).
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页数：6
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