n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation

被引：14

作者：

Katamune, Yuki ^{[1
]}

Mori, Daichi ^{[1
]}

Arikawa, Daisuke ^{[1
]}

Izumi, Akira ^{[1
]}

Shimaoka, Takehiro ^{[2
]}

Ichikawa, Kimiyoshi ^{[2
]}

Koizumi, Satoshi ^{[2
]}

机构：

[1] Kyushu Inst Technol, Dept Elect & Elect Engn, 1-1 Sensuicho, Kitakyushu, Fukuoka 8048550, Japan

[2] Natl Inst Mat Sci, Elect & Elect Mat Field, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2020年 / 126卷 / 11期

关键词：

Diamond; n-type doping; Hot-filament CVD; Hall effect; Secondary-ion mass spectrometry; BIPOLAR JUNCTION TRANSISTOR; DEVICE; TECHNOLOGY; FILMS; RESISTANCE; VOLTAGE; DIODES;

D O I：

10.1007/s00339-020-04060-w

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial growth of n-type semiconductor diamond films on (111)-oriented diamond has been achieved by hot-filament chemical vapor deposition (HFCVD) using a methane source and a trimethylphosphine dopant source. Secondary-ion mass spectrometry showed that the phosphorus atoms are incorporated into the films in the concentration range of 10(18)-10(19) cm(-3)from the vapor phase. Hall-effect measurements confirmed n-type conductivity in a wide temperature range up to 873 K. Electrons are thermally activated from a phosphorus donor level of approximately 0.57 eV as dominant carriers under the presence of tungsten atoms with concentrations of around 10(18) cm(-3)from filaments. These results indicate that HFCVD has the potential to be applied to an n-type doping process for fabricating diamond electronic devices in the phosphorus concentration range of not lower than 10(18) cm(-3).

引用

页数：6