Sub-bandgap Voltage Electroluminescence and Magneto-oscillations in a WSe2 Light-Emitting van der Waals Heterostructure

被引:47
作者
Binder, Johannes [1 ,2 ]
Withers, Freddie [3 ,4 ]
Molas, Maciej R. [1 ]
Faugeras, Clement [1 ]
Nogajewski, Karol [1 ]
Watanabe, Kenji [5 ]
Taniguchi, Takashi [5 ]
Kozikov, Aleksey [3 ,4 ]
Geim, Andre K. [4 ,6 ]
Novoselov, Kostya S. [3 ,4 ]
Potemski, Marek [1 ]
机构
[1] CNRS UGA UPS INSA EMFL, Lab Natl Champs Magnet Intenses, 25 Rue Martyrs, F-38042 Grenoble, France
[2] Univ Warsaw, Fac Phys, Pasteura 5, PL-02093 Warsaw, Poland
[3] Univ Manchester, Sch Phys & Astron, Oxford Rd, Manchester M13 9PL, Lancs, England
[4] Univ Manchester, Natl Graphene Inst, Oxford Rd, Manchester M13 9PL, Lancs, England
[5] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[6] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Oxford Rd, Manchester M13 9PL, Lancs, England
基金
欧洲研究理事会; 英国工程与自然科学研究理事会;
关键词
Electroluminescence; magneto-oscillations; van der Waals heterostructures; tungsten diselenide; hexagonal boron nitride; acceptor; FIELD-EFFECT TRANSISTORS; GRAPHENE HETEROSTRUCTURES; DIODES; MONOLAYER; VALLEY;
D O I
10.1021/acs.nanolett.6b04374
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report on experimental investigations of an electrically driven WSe2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle band gap of monolayer WSe2. This observation can be interpreted by considering the Coulomb interaction and a tunneling process involving excitons, well beyond the picture of independent charge carriers. An applied magnetic field reveals pronounced magneto-oscillations in the electroluminescence of the free exciton emission intensity with a 1/B periodicity. This effect is ascribed to a modulation of the tunneling probability resulting from the Landau quantization in the graphene electrodes. A sharp feature in the differential conductance indicates that the Fermi level is pinned and allows for an estimation of the acceptor binding energy.
引用
收藏
页码:1425 / 1430
页数:6
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