Sub-bandgap Voltage Electroluminescence and Magneto-oscillations in a WSe2 Light-Emitting van der Waals Heterostructure

被引:47
作者
Binder, Johannes [1 ,2 ]
Withers, Freddie [3 ,4 ]
Molas, Maciej R. [1 ]
Faugeras, Clement [1 ]
Nogajewski, Karol [1 ]
Watanabe, Kenji [5 ]
Taniguchi, Takashi [5 ]
Kozikov, Aleksey [3 ,4 ]
Geim, Andre K. [4 ,6 ]
Novoselov, Kostya S. [3 ,4 ]
Potemski, Marek [1 ]
机构
[1] CNRS UGA UPS INSA EMFL, Lab Natl Champs Magnet Intenses, 25 Rue Martyrs, F-38042 Grenoble, France
[2] Univ Warsaw, Fac Phys, Pasteura 5, PL-02093 Warsaw, Poland
[3] Univ Manchester, Sch Phys & Astron, Oxford Rd, Manchester M13 9PL, Lancs, England
[4] Univ Manchester, Natl Graphene Inst, Oxford Rd, Manchester M13 9PL, Lancs, England
[5] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[6] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Oxford Rd, Manchester M13 9PL, Lancs, England
基金
欧洲研究理事会; 英国工程与自然科学研究理事会;
关键词
Electroluminescence; magneto-oscillations; van der Waals heterostructures; tungsten diselenide; hexagonal boron nitride; acceptor; FIELD-EFFECT TRANSISTORS; GRAPHENE HETEROSTRUCTURES; DIODES; MONOLAYER; VALLEY;
D O I
10.1021/acs.nanolett.6b04374
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report on experimental investigations of an electrically driven WSe2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle band gap of monolayer WSe2. This observation can be interpreted by considering the Coulomb interaction and a tunneling process involving excitons, well beyond the picture of independent charge carriers. An applied magnetic field reveals pronounced magneto-oscillations in the electroluminescence of the free exciton emission intensity with a 1/B periodicity. This effect is ascribed to a modulation of the tunneling probability resulting from the Landau quantization in the graphene electrodes. A sharp feature in the differential conductance indicates that the Fermi level is pinned and allows for an estimation of the acceptor binding energy.
引用
收藏
页码:1425 / 1430
页数:6
相关论文
共 37 条
  • [31] Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
    Wallbank, J. R.
    Ghazaryan, D.
    Misra, A.
    Cao, Y.
    Tu, J. S.
    Piot, B. A.
    Potemski, M.
    Pezzini, S.
    Wiedmann, S.
    Zeitler, U.
    Lane, T. L. M.
    Morozov, S. V.
    Greenaway, M. T.
    Eaves, L.
    Geim, A. K.
    Fal'ko, V. I.
    Novoselov, K. S.
    Mishchenko, A.
    [J]. SCIENCE, 2016, 353 (6299) : 575 - 579
  • [32] Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2
    Wang, G.
    Bouet, L.
    Lagarde, D.
    Vidal, M.
    Balocchi, A.
    Amand, T.
    Marie, X.
    Urbaszek, B.
    [J]. PHYSICAL REVIEW B, 2014, 90 (07)
  • [33] Wilson N. R., 2016, 160105865 ARXIV
  • [34] WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature
    Withers, F.
    Del Pozo-Zamudio, O.
    Schwarz, S.
    Dufferwiel, S.
    Walker, P. M.
    Godde, T.
    Rooney, A. P.
    Gholinia, A.
    Woods, C. R.
    Blake, P.
    Haigh, S. J.
    Watanabe, K.
    Taniguchi, T.
    Aleiner, I. L.
    Geim, A. K.
    Fal'ko, V. I.
    Tartakovskii, A. I.
    Novoselov, K. S.
    [J]. NANO LETTERS, 2015, 15 (12) : 8223 - 8228
  • [35] Light-emitting diodes by band-structure engineering in van der Waals heterostructures
    Withers, F.
    Del Pozo-Zamudio, O.
    Mishchenko, A.
    Rooney, A. P.
    Gholinia, A.
    Watanabe, K.
    Taniguchi, T.
    Haigh, S. J.
    Geim, A. K.
    Tartakovskii, A. I.
    Novoselov, K. S.
    [J]. NATURE MATERIALS, 2015, 14 (03) : 301 - 306
  • [36] Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe2
    Zhang, Chendong
    Chen, Yuxuan
    Johnson, Amber
    Li, Ming-Yang
    Li, Lain-Jong
    Mende, Patrick C.
    Feenstra, Randall M.
    Shih, Chih-Kang
    [J]. NANO LETTERS, 2015, 15 (10) : 6494 - 6500
  • [37] Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis
    Zhao, Y.
    Wan, Z.
    Xu, X.
    Patil, S. R.
    Hetmaniuk, U.
    Anantram, M. P.
    [J]. SCIENTIFIC REPORTS, 2015, 5