Tailoring the optical and physical properties of La doped ZnO nanostructured thin films

被引:51
作者
Ahmed, Mai M. A. [1 ]
Tawfik, Wael Z. [1 ,2 ]
Elfayoumi, M. A. K. [1 ]
Abdel-Hafiez, M. [3 ,4 ,5 ]
El-Dek, S., I [6 ]
机构
[1] Beni Suef Univ, Fac Sci, Dept Phys, Bani Suwayf 62511, Egypt
[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Gwangju 61186, South Korea
[3] Harvard Univ, Lyman Lab Phys, Cambridge, MA 02138 USA
[4] Fayoum Univ, Fac Sci, Phys Dept, Al Fayyum, Egypt
[5] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia
[6] Beni Suef Univ, Fac Postgrad Studies Adv Sci PSAS, Mat Sci & Nanotechnol Dept, Bani Suwayf 62511, Egypt
关键词
La doped ZnO; Spray pyrolysis; Magnetic moment; Band gap; Roughness; MAGNETIC-PROPERTIES; CO; NANOPARTICLES; TEMPERATURE; GROWTH; FERROMAGNETISM; PERFORMANCE; NANOWIRES; MECHANISM;
D O I
10.1016/j.jallcom.2019.03.340
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The modification and tailoring characteristics of nanostructured materials are of great interest due to controllable and unusual inherent properties in such materials. A simple spray pyrolysis technique was used to prepare pure and La-doped ZnO films. The influence of La concentration (0, 0.33, 0.45, 0.66, 0.92 and 1.04 at. %) on the structural, optical, and magnetic properties of ZnO was investigated. The exact nominal compositions of the prepared films were determined from the field emission scanning electron microscope occupied with EDX. X-ray diffraction confirmed that the samples possessed single-phase hexagonal wurtzite structure. The main crystal size was decreased from 315.50 angstrom to 229.04 angstrom depending on La dopant concentration. This decrease is due to the small ionic radius of Zn ions in compared to La ions. The band gap values were found to be depend strongly on La3+ ion content. Introducing La into ZnO induces a clear magnetic moment without any distortion in the geometrical symmetry, it also reveals the ferromagnetic coupling. The saturation magnetic moment of 1.04 at.% La-doped ZnO shows the highest value of 0.014 emu, which is similar to 23 times higher than pure ZnO sample. The obtained results were discussed and compared with other literature data and showed an acceptable agreement. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页码:586 / 592
页数:7
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共 46 条
  • [11] Effect of indium incorporation in Zn1-xCoxO thin films
    Chaudhary, Sujeet
    Bhatti, Kanwal Preet
    Pandya, D. K.
    Kashyap, S. C.
    Nigam, A. K.
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2009, 321 (08) : 966 - 970
  • [12] Synthesis and growth mechanism of Cr-doped ZnO single-crystalline nanowires
    Chuab, Dewei
    Zeng, Yu-Ping
    Jiang, Dongliang
    [J]. SOLID STATE COMMUNICATIONS, 2007, 143 (6-7) : 308 - 312
  • [13] Effects of oxygen partial pressure on the characteristics of magnetron-sputtered ZnMgBeO thin films
    Cuong, Hoang Ba
    Lee, Byung-Teak
    [J]. APPLIED SURFACE SCIENCE, 2015, 355 : 582 - 586
  • [14] Synthesis of spherical ZnS based nanocrystals using thioglycolic assisted hydrothermal method
    Davar, Fatemeh
    Mohammadikish, Maryam
    Loghman-Estarki, Mohammad Reza
    Hamidi, Zohreh
    [J]. CRYSTENGCOMM, 2012, 14 (21): : 7338 - 7344
  • [15] Structural, electronic, magnetic, optical and optoelectronic properties of the sprayed cobalt doped ZnO nanostructured thin films
    El Haimeur, A.
    Zarhri, Z.
    Bouaouda, M.
    Colin, J.
    Addou, M.
    El Kenz, A.
    [J]. MATERIALS RESEARCH EXPRESS, 2018, 5 (07):
  • [16] ZnO and ZnO1-x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior
    Gul, Fatih
    Efeoglu, Hasan
    [J]. CERAMICS INTERNATIONAL, 2017, 43 (14) : 10770 - 10775
  • [17] Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor
    Gul, Fatih
    Efeoglu, Hasan
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2017, 101 : 172 - 179
  • [18] Facile Synthesis of Well-Aligned ZnO Nanowires on Various Substrates by MOCVD for Enhanced Photoelectrochemical Water-Splitting Performance
    Hassan, Mostafa Afifi
    Johar, Muhammad Ali
    Yu, Sou Young
    Ryu, Sang-Wan
    [J]. ACS SUSTAINABLE CHEMISTRY & ENGINEERING, 2018, 6 (12): : 16047 - 16054
  • [19] La-doping content effect on the optical and electrical properties of La-doped ZnO thin films
    He, H. -Y.
    Huang, J. -F.
    Fei, J.
    Lu, J.
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (02) : 1205 - 1211
  • [20] Growth of ZnO thin films on c-plane Al2O3 by molecular beam epitaxy using ozone as an oxygen source
    Heo, Y. W.
    Ip, K.
    Pearton, S. J.
    Norton, D. P.
    Budai, J. D.
    [J]. APPLIED SURFACE SCIENCE, 2006, 252 (20) : 7442 - 7448