Broadband second-harmonic phase-matching in dispersion engineered slot waveguides

被引:14
作者
Kim, Sangsik [1 ]
Qi, Minghao
机构
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
SILICON; GENERATION; LIGHT; CONVERSION; 2ND-ORDER; EMISSION; GREEN; INDEX; PUMP;
D O I
10.1364/OE.24.000773
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Parametric optical nonlinearities are usually weak and require both high optical field intensity and phase-matching. Micro/nanophotonics, with strong confinement of light in waveguides of nanometer-scale cross-sections, can provide high field intensity, but is still in need of a solution for phase-matching across a broad bandwidth. In this article, we show that mode-coupling in slot waveguides can engineer the waveguide modal dispersion, and with proper choice of materials, can achieve on-chip broadband second-harmonic phase-matching. A phase-matching bandwidth in the range of 220 nm at mid-infrared can occur for a hetero-slot waveguide consisting of aluminum nitride (AlN) and silicon nitride (SiN). With a high-nonlinearity polymer as cladding material, about 1.76 W(-1)cm(-2) of normalized conversion efficiency in second-harmonic-generation (SHG) and about 23 dB signal gain in degenerate optical parametric amplification (DOPA) can be achieved over a broad bandwidth. An asymmetric-slot waveguide configuration and a thermal tuning scheme are proposed to reduce the fabrication difficulty. This concept of broadband second-harmonic phase-matching can be extended to other nonlinear optical frequency mixing processes, thus expanding the scope of on-chip nonlinear optical applications. (C) 2016 Optical Society of America
引用
收藏
页码:773 / 786
页数:14
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